An accurate analysis of the wire-like states at the T-shaped intersections of cleaved-edge overgrown (CEO) semiconductor quantum structures is presented with the accent on their optimization for high-temperature laser device applications. This is done by making the proper choice of the structure geometry, which gives the largest energy separation between quasi-2D and quasi-1D exciton states. As a possible modification of the simple T-shaped structure, consistent with the CEO technique, we propose a double T-shaped intersection, with an even stronger binding of the quasi-1D state.