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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-149451
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.14945
Zusammenfassung
We report the growth of the half-Heusler alloy NiMnSb on InP (001) by molecular-beam epitaxy using a lattice-matched (In,Ga)As buffer. High-resolution x-ray diffraction confirms a high crystalline quality. Spot-profile analysis low-energy electron diffraction measurements show well-defined surface reconstructions. The samples show the expected high Curie temperature and an uniaxial anisotropy.
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