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Spin-dependent tunneling through a symmetric semiconductor barrier

DOI to cite this document:
10.5283/epub.1624
Perel', V. ; Tarasenko, S. ; Yassievich, I. ; Ganichev, Sergey ; Belkov, Vassilij ; Prettl, Wilhelm
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Date of publication of this fulltext: 05 Aug 2009 13:30


Abstract

The problem of electron tunneling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The k3 Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunneling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers.


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