Perel', V., Tarasenko, S., Yassievich, I., Ganichev, Sergey, Belkov, Vassilij and Prettl, Wilhelm (2003) Spin-dependent tunneling through a symmetric semiconductor barrier. Physical Review B 67 (20), p. 201304.
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Other URL: http://prola.aps.org/abstract/PRB/v67/i20/e201304
Abstract
The problem of electron tunneling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The k3 Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunneling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers.
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| Item type: | Article | ||||
|---|---|---|---|---|---|
| Date: | May 2003 | ||||
| Institutions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Wilhelm Prettl Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev | ||||
| Projects: | Graduiertenkolleg Nichtlinearität und Nichtgleichgewicht | ||||
| Identification Number: |
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| Dewey Decimal Classification: | 500 Science > 530 Physics | ||||
| Status: | Published | ||||
| Refereed: | Yes, this version has been refereed | ||||
| Created at the University of Regensburg: | Yes | ||||
| Item ID: | 1624 |
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