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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-16260
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.1626
Zusammenfassung
Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction.