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Carbon doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 10^6 cm^2/Vs

Gerl, Christian ; Schmult, S. ; Tranitz, H. ; Mitzkus, C. ; Wegscheider, Werner

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Utilizing a carbon filament doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x 10^11 cm^-2 were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum well width and ...


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