Gerl, Christian ; Schmult, S. ; Tranitz, H. ; Mitzkus, C. ; Wegscheider, Werner
Alternative links to fulltext:ArxivPublisher Full text not available from this repository.
| Item type: | Article |
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| Journal or Publication Title: | Applied Physics Letters |
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| Volume: | 86 |
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| Page Range: | p. 252105 |
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| Date: | 2005 |
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| Institutions: | UNSPECIFIED |
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| Projects: | Graduiertenkolleg Nichtlinearität und Nichtgleichgewicht |
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| Identification Number: | | Value | Type |
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| cond-mat/0501492 | arXiv ID |
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| Related URLs: | |
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| Dewey Decimal Classification: | 500 Science > 530 Physics |
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| Status: | Published |
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| Refereed: | Yes, this version has been refereed |
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| Created at the University of Regensburg: | Yes |
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| Item ID: | 1627 |
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Abstract
Utilizing a carbon filament doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x 10^11 cm^-2 were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum well width and ...
Abstract
Utilizing a carbon filament doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x 10^11 cm^-2 were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum well width and the spacer thickness. In particular an increase of the quantum well width from an optimal value of 15 nm to 18 nm is accompanied by a 35 % reduction of the hole mobility. The quality of ultrahigh-mobility electron systems is not affected by the employed carbon doping source.
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