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Fractional quantum Hall effect in CdTe

URN to cite this document:
Piot, B.A. ; Kunc, J. ; Potemski, M. ; Maude, D.K. ; Betthausen, Christian ; Vogl, Anton ; Weiss, Dieter ; Karczewski, G. ; Wojtowicz, T.
Date of publication of this fulltext: 08 Sep 2010 08:16


The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at millikelvin temperatures. Fully developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley ...


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