Piot, B.A., Kunc, J., Potemski, M., Maude, D.K., Betthausen, Christian, Vogl, Anton, Weiss, Dieter, Karczewski, G. und Wojtowicz, T.
Fractional quantum Hall effect in CdTe.
Physical Review B (PRB) 82 (8), 081307-1.
Zum Artikel beim Verlag (über DOI)
Andere URL zum Volltext: http://link.aps.org/doi/10.1103/PhysRevB.82.081307
The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at millikelvin temperatures. Fully developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley ...
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