Fractional quantum Hall effect in CdTe

URN to cite this document:: urn:nbn:de:bvb:355-epub-165201
DOI to cite this document:: 10.5283/epub.16520

Piot, B. A. ; Kunc, J. ; Potemski, M. ; Maude, D. K. ; Betthausen, Christian ; Vogl, Anton ; Weiss, Dieter ; Karczewski, G. ; Wojtowicz, T.

Preview

PDF
(225kB)

Date of publication of this fulltext: 08 Sep 2010 08:16

Alternative links to fulltext:DOI Publisher

Details

Preview

Export bibliographical data

Abstract

The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at millikelvin temperatures. Fully developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley ...