Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.1674

Klappenberger, Florian ; Renk, Karl Friedrich ; Summer, R. ; Keldysh, Leonid ; Rieder, Bernhard ; Wegscheider, Werner

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Veröffentlichungsdatum dieses Volltextes: 05 Aug 2009 13:31

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We report on a reversible avalanche breakdown due to free-carrier multiplication caused by cross band gap impact ionization in a GaAs microcrystal. The n GaAs microcrystal (length 1 µm, diameter 1 µm) was embedded between n+ GaAs layers serving as electric contacts. We guided an electric pulse to the sample and determined, from the reflected and transmitted pulse, the I(V) characteristic. The ...