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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-169393
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.16939
Zusammenfassung
Experimental investigations of self-generated and externally driven non-linear current oscillations due to impact ionization of shallow impurities in n-type GaAs at low temperatures are presented. The regular relaxation oscillations which appear at the onset of breakdown are destabilized by a magnetic field normal to the epitaxial layer and multifrequency oscillations and chaotic fluctuations ...
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