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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-169689
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.16968
Zusammenfassung
GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 µm. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal ...
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