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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-170533
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.17053
Zusammenfassung
The far‐infrared magnetoabsorption of shallow donors in n‐GaAs has been investigated as a function of irradiation intensity applying a low‐temperature photoacoustic cell. Optical cross sections and saturation intensities of various optical transitions were quantitatively determined yielding recombination times of excited electrons.
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