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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-170646
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.17064
Alternative Links zum Volltext:DOI
Zusammenfassung
A novel nonlinear model is presented for the occurrence of current fluctuations at low temperatures in extrinsic semiconductors. It is based on impact ionization of shallow impurities and structure-forming processes leading to a current filament. Numerical investigations reproduce the current-voltage characteristics and reveal regular, quasiperiodic, and frequency-locked spontaneous current ...
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