| PDF (380kB) |
- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-170716
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.17071
Zusammenfassung
The optical saturation of nonresonant photoionization of shallow acceptors in p-Ge was investigated at low temperatures using a high-power FIR molecular laser. The experimental results were analyzed in terms of a rate equation model. Very small saturation intensities in the order of 10 mW/cm−2 and long free hole recombination times in the range of 10 μs were observed.
Nur für Besitzer und Autoren: Kontrollseite des Eintrags