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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-173392
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.17339
Alternative Links zum Volltext:DOI
Zusammenfassung
The steady‐state photoconductance and the transient photoresponse of boron‐doped polycrystalline silicon films have been measured as a function of intensity at photon energies above and below the band gap applying several semiconductor lasers. The intensity dependence of the dc photosignal and the transient behavior are distinctly different for interband and subgap excitation. A kinetic model ...
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