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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-173491
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.17349
Alternative Links zum Volltext:DOI
Zusammenfassung
The magneto-photoconductivity due to 1s-2p+ optical transitions of shallow donors in n-GaAs has been investigated as a function of intensity for several bias voltages at low temperatures between 2K and 4.2 K. At low intensities a superlinear increase of the photoconductive signal with rising intensity has been observed which gets more pronounced at higher bias voltages and lower temperatures. The ...
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