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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-174874
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.17487
Alternative Links zum Volltext:DOI
Zusammenfassung
The photoconductive excitation spectrum of GaP:N (ZnTe) diodes was measured irradiating the samples from p- and n-side unter forward and reverse bias conditions. The ionization thresholds of S and Te donors as well as transitions from their ground states to excited bound levels with subsequent ionization by the electric field could be seen. The observed minima in the continuum above the ...
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