Microscopic analysis of optical gain in InGaN/GaN quantum wells

DOI to cite this document:: 10.5283/epub.1767

Witzigmann, B. ; Laino, V. ; Luisier, M. ; Schwarz, Uli

; Feicht, Georg ; Wegscheider, Werner ; Engl, K. ; Furitsch, M. ; Leber, A. ; Lell, A. ; Härle, V.

PDF
(203kB) - Repository staff only

Date of publication of this fulltext: 05 Aug 2009 13:32

Alternative links to fulltext:DOI Publisher

Details

Indexed in

Export bibliographical data

Abstract

A microscopic theory is used to analyze optical gain in InGaN/GaN quantum wells (QW). Experimental data are obtained from Hakki-Paoli measurements on edge-emitting lasers for different carrier densities. The simulations are based on the solution of the quantum kinetic Maxwell-Bloch equations, including many-body effects and a self-consistent treatment of piezoelectric fields. The results confirm ...