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Microscopic analysis of optical gain in InGaN/GaN quantum wells

Witzigmann, B., Laino, V., Luisier, M., Schwarz, Uli, Feicht, Georg, Wegscheider, Werner, Engl, K., Furitsch, M., Leber, A., Lell, A. and Härle, V. (2006) Microscopic analysis of optical gain in InGaN/GaN quantum wells. Applied Physics Letters 88, 021104.

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A microscopic theory is used to analyze optical gain in InGaN/GaN quantum wells (QW). Experimental data are obtained from Hakki–Paoli measurements on edge-emitting lasers for different carrier densities. The simulations are based on the solution of the quantum kinetic Maxwell–Bloch equations, including many-body effects and a self-consistent treatment of piezoelectric fields. The results confirm ...


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Item type:Article
Date:January 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Ulrich Schwarz
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Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:1767
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