Microscopic analysis of optical gain in InGaN/GaN quantum wells

DOI to cite this document:: 10.5283/epub.1767

Witzigmann, B. ; Laino, V. ; Luisier, M. ; Schwarz, Uli ; Feicht, Georg ; Wegscheider, Werner ; Engl, K. ; Furitsch, M. ; Leber, A. ; Lell, A. ; Härle, V.

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Date of publication of this fulltext: 05 Aug 2009 13:32

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Abstract

A microscopic theory is used to analyze optical gain in InGaN/GaN quantum wells (QW). Experimental data are obtained from Hakki–Paoli measurements on edge-emitting lasers for different carrier densities. The simulations are based on the solution of the quantum kinetic Maxwell–Bloch equations, including many-body effects and a self-consistent treatment of piezoelectric fields. The results confirm ...