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Resonant tunneling magnetoresistance in antiferromagnetically coupled Fe-based structures with multilayered Si/Ge spacers

DOI to cite this document:
Gareev, Rashid ; Weides, Martin ; Schreiber, Reinert ; Poppe, Ulrich
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Date of publication of this fulltext: 05 Aug 2009 13:33


We report on the experimental evidence of the tunneling magnetoresistance (TMR) effect near 3% and its inversion in strongly antiferromagnetically coupled Fe (001)/([Si(0.2 nm)/Ge(0.2 nm)]*5)/Fe epitaxial structures with diffused interfaces. We explain the inversion of TMR with biasing voltage by resonant tunneling across impurity states with weak spin split E${\approx}$10 meV and ...


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