Resonant tunneling magnetoresistance in antiferromagnetically coupled Fe-based structures with multilayered Si/Ge spacers

DOI to cite this document:: 10.5283/epub.1812

Gareev, Rashid ; Weides, Martin

; Schreiber, Reinert ; Poppe, Ulrich

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Date of publication of this fulltext: 05 Aug 2009 13:33

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Abstract

We report on the experimental evidence of the tunneling magnetoresistance (TMR) effect near 3% and its inversion in strongly antiferromagnetically coupled Fe(001)/([Si(0.2 nm)/Ge(0.2 nm)](*)5)/Fe epitaxial structures with diffused interfaces. We explain the inversion of TMR with biasing voltage by resonant tunneling across impurity states with weak spin split Delta E similar to 10 meV and ...