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Fabian, Jaroslav ; Zutic, Igor

The Ebers–Moll model for magnetic bipolar transistors

Fabian, Jaroslav and Zutic, Igor (2005) The Ebers–Moll model for magnetic bipolar transistors. Applied Physics Letters 86, p. 133506.

Date of publication of this fulltext: 05 Aug 2009 13:33
Article
DOI to cite this document: 10.5283/epub.1818


Abstract

The equivalent electrical circuit of the Ebers-Moll-type is introduced for magnetic bipolar transistors. In addition to conventional diodes and current sources, the new circuit comprises two novel elements due to spin-charge coupling. A classification scheme of the operating modes of magnetic bipolar transistors in the low bias regime is presented. (C) 2005 American Institute Of Physics.



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Details

Item typeArticle
Journal or Publication TitleApplied Physics Letters
Publisher:AMER INST PHYSICS
Open Access Type:Due to SHERPA/RoMEO
Place of Publication:MELVILLE
Volume:86
Page Range:p. 133506
DateMarch 2005
InstitutionsPhysics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian
Identification Number
ValueType
10.1063/1.1886251DOI
KeywordsELECTRICAL SPIN INJECTION; SEMICONDUCTORS; SPINTRONICS;
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedYes, this version has been refereed
Created at the University of RegensburgYes
URN of the UB Regensburgurn:nbn:de:bvb:355-epub-18183
Item ID1818

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