Go to content
UR Home

The Ebers–Moll model for magnetic bipolar transistors

URN to cite this document:
urn:nbn:de:bvb:355-epub-18183
DOI to cite this document:
10.5283/epub.1818
Fabian, Jaroslav ; Zutic, Igor
[img]
Preview
PDF - Published Version
(129kB)
Date of publication of this fulltext: 05 Aug 2009 13:33


Abstract

The equivalent electrical circuit of the Ebers–Moll-type is introduced for magnetic bipolar transistors. In addition to conventional diodes and current sources, the new circuit comprises two novel elements due to spin-charge coupling. A classification scheme of the operating modes of magnetic bipolar transistors in the low bias regime is presented. ©2005 American Institute of Physics


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de
0941 943 4239

Dissertations: dissertationen@ur.de
0941 943 3904

Research data: daten@ur.de
0941 943 4239

Contact persons