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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-18192
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.1819
Zusammenfassung
Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. Two ways to overcome this difficulty are proposed, both based on spin-polarized transport across a heterojunction. Using a realistic transport model incorporating the relevant spin dynamics of both electrons and holes, it is ...
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