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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-18272
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.1827
Zusammenfassung
In an inhomogeneously-doped magnetic semiconductor, spin relaxation time T1 can be determined by all-electrical measurements. Nonequilibrium spin injected in a magnetic p–n junction gives rise to the spin-voltaic effect, in which the nonequilibrium spin-induced charge current is very sensitive to T1 and can flow even at no applied bias. It is proposed that T1 can be determined by measuring the ...
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