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Spin-Polarized Transport in Inhomogeneous Magnetic Semiconductors: Theory of Magnetic/Nonmagnetic p-n Junctions

URN to cite this document:
urn:nbn:de:bvb:355-epub-18288
DOI to cite this document:
10.5283/epub.1828
Zutic, Igor ; Fabian, Jaroslav ; Sarma, S. Das
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Date of publication of this fulltext: 05 Aug 2009 13:33


Abstract

A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spin-voltaic effect, spin valve effect, exponential and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.


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