Spin injection through the depletion layer: A theory of spin-polarized p-n junctions and solar cells

URN to cite this document:: urn:nbn:de:bvb:355-epub-18290
DOI to cite this document:: 10.5283/epub.1829

Zutic, Igor ; Fabian, Jaroslav

; Sarma, S. Das

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Date of publication of this fulltext: 05 Aug 2009 13:33

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Abstract

A drift-diffusion model for spin-charge transport in spin-polarized p-n junctions is developed and solved numerically for a realistic set of material parameters based on GaAs. It is demonstrated that spin polarization can be injected through the depletion layer by both minority and majority carriers, making all semiconductor devices such as spin-polarized solar cells and bipolar transistors ...