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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-184463
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.18446
Alternative Links zum Volltext:DOI
Zusammenfassung
The kinetics of electrons bound to shallow donor impurities in n-GaAs was investigated by saturation spectroscopy using the University of California at Santa Barbara free electron laser. The resonant photothermal conductivity from 1s–2p+ transitions was measured at intensities greatly exceeding previous studies. Saturation of bound-to-free photoionization transitions was measured from 0 to 4 ...
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