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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-18703
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.1870
Zusammenfassung
The spin-galvanic effect and the circular photogalvanic effect induced by terahertz radiation are applied to determine the relative strengths of Rashba and Dresselhaus band spin-splitting in (001)- grown GaAs and InAs based two dimensional electron systems. We observed that shifting the $\\delta$-doping plane from one side of the quantum well to the other results in a change of sign of ...
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