Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

Zusammenfassung

We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-hand excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time-resolved photoluminescence. A theoretical model takes into account Spin splitting of conduction and valence bands. (C) 2003 Elsevier Ltd. All rights reserved.