Luminescence studies of a Si/SiO₂ superlattice

DOI to cite this document:: 10.5283/epub.19328

Averboukh, B. ; Huber, Rupert ; Cheah, K. W. ; Shen, Y. R. ; Qin, G. G. ; Ma, Z. C. ; Zong, W. H.

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Date of publication of this fulltext: 01 Feb 2011 11:15

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Abstract

Photoluminescence and electroluminescence from a Si/SiO2 superlattice have been measured. They show similar characteristics and exhibit an inhomogeneously broadened photoluminescence band peaked at 2.06 eV. The excitation spectrum indicates that excitations occur in the Si layers. The insensitivity of the luminescence spectrum and decay to temperature and excitation wavelength suggests that ...