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Luminescence studies of a Si/SiO₂ superlattice

Averboukh, B., Huber, Rupert, Cheah, K. W., Shen, Y. R., Qin, G.G., Ma, Z. C. and Zong, W. H. (2002) Luminescence studies of a Si/SiO₂ superlattice. Journal of Applied Physics 92 (7), pp. 3564-3568.

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Photoluminescence and electroluminescence from a Si/SiO2 superlattice have been measured. They show similar characteristics and exhibit an inhomogeneously broadened photoluminescence band peaked at 2.06 eV. The excitation spectrum indicates that excitations occur in the Si layers. The insensitivity of the luminescence spectrum and decay to temperature and excitation wavelength suggests that ...


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Item type:Article
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Rupert Huber
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Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Item ID:19328
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