Structure and electronic properties of SiO₂/Si multilayer superlattices: Si K edge and L₃,₂ edge x-ray absorption fine structure study

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.19333

Sammynaiken, R. ; Naftel, S. J ; Sham, T. K. ; Cheah, K. W. ; Averboukh, B. ; Huber, Rupert ; Shen, Y. R. ; Qin, G. G. ; Ma, Z. C. ; Zong, W. H.

PDF
(117kB) - Nur für Mitarbeiter des Archivs

Veröffentlichungsdatum dieses Volltextes: 01 Feb 2011 11:17

Alternative Links zum Volltext:DOI

Details

Bibliographische Daten exportieren

Zusammenfassung

We report an x-ray absorption fine structure study at the Si K and L3,2 edges of a series of Si/SiO2 superlattices (SL). The SL system comprises four periods of elemental silicon with a spacing of 1, 1.4, 2.2, and 2.6 nm sandwiched by a 1.5 nm silicon oxide and capped by a 3 nm silicon oxide layer. These systems exhibit electroluminescence and photoluminescence. X-ray absorption near edge ...