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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-198907
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.19890
Zusammenfassung
We were able to control the magnitude and sign of the uniaxial anisotropy in 5-nm-thin (Ga,Mn)As wires by changing the crystallographic direction of the lithography-induced strain relaxation. The 1-μm-wide (Ga,Mn)As wires, oriented in [110] and [1math0] directions, were fabricated using electron beam lithography. Their magnetic anisotropies were studied by a coherent rotation method at ...
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