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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-21406
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.2140
Alternative Links zum Volltext:Verlag
Zusammenfassung
The spin-galvanic effect and the inverse effect, which yeilds current induced spin polarization, in low dimensional semiconductor structures are reviewed. Both effect are caused by asymmetric spin relaxation in systems with lifted spin degeneracy due to k-linear terms in the Hamiltonian.
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