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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-214523
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.21452
Zusammenfassung
We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+ −(Ga,Mn)As/n+ −GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the ...
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