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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-21783
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.2178
Alternative Links zum Volltext:Verlag
Zusammenfassung
There is much recent interest in exploiting the spin of conduction electrons in semiconductor heterostructures together with their charge to realize new device concepts1. Electrical currents are usually generated by electric or magnetic fields, or by gradients of, for example, carrier concentration or temperature. The electron spin in a spin-polarized electron gas can, in principle, also drive an ...
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