Ganichev, Sergey, Ketterl, Hermann, Prettl, Wilhelm, Merkulov, I., Perel, V., Yassievich, Irina and Malyshev, A. (2001) Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities. Physical Review B 63 (20), 201204(R).
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Abstract
A giant negative magnetoresistance has been observed in bulk germanium doped with multiply charged deep impurities. Applying a magnetic field the resistance may decrease exponentially at any orientation of the field. A drop of the resistance as much as about 10 000% has been measured at 6 T. The effect is attributed to the spin splitting of impurity ground state with a very large g factor in the order of several tens depending on impurity.
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| Item type: | Article | ||||
|---|---|---|---|---|---|
| Date: | May 2001 | ||||
| Institutions: | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev | ||||
| Identification Number: |
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| Dewey Decimal Classification: | 500 Science > 530 Physics | ||||
| Status: | Published | ||||
| Refereed: | Yes, this version has been refereed | ||||
| Created at the University of Regensburg: | Yes | ||||
| Item ID: | 2192 |
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