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Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities
Ganichev, Sergey, Ketterl, Hermann, Prettl, Wilhelm, Merkulov, I., Perel, V., Yassievich, Irina and Malyshev, A. (2001) Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities. Physical Review B 63 (20), 201204(R).Date of publication of this fulltext: 05 Aug 2009 13:37
Article
DOI to cite this document: 10.5283/epub.2192
Abstract
A giant negative magnetoresistance has been observed in bulk germanium doped with multiply charged deep impurities. Applying a magnetic field the resistance may decrease exponentially at any orientation of the field. A drop of the resistance as much as about 10 000% has been measured at 6 T. The effect is attributed to the spin splitting of impurity ground state with a very large g factor in the order of several tens depending on impurity.
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| Item type | Article | ||||
| Journal or Publication Title | Physical Review B | ||||
| Publisher: | AMER PHYSICAL SOC | ||||
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| Place of Publication: | COLLEGE PK | ||||
| Volume: | 63 | ||||
| Number of Issue or Book Chapter: | 20 | ||||
| Page Range: | 201204(R) | ||||
| Date | May 2001 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev | ||||
| Identification Number |
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| Keywords | ACCEPTOR CENTER; GERMANIUM; LOCALIZATION; TRANSPORT; PHYSICS; GAP; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Yes, this version has been refereed | ||||
| Created at the University of Regensburg | Yes | ||||
| URN of the UB Regensburg | urn:nbn:de:bvb:355-epub-21926 | ||||
| Item ID | 2192 |
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