Go to content
UR Home

Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities

URN to cite this document:
urn:nbn:de:bvb:355-epub-21926
Ganichev, Sergey ; Ketterl, Hermann ; Prettl, Wilhelm ; Merkulov, I. ; Perel, V. ; Yassievich, Irina ; Malyshev, A.
[img]
Preview
PDF
(52kB)
Date of publication of this fulltext: 05 Aug 2009 13:37


Abstract

A giant negative magnetoresistance has been observed in bulk germanium doped with multiply charged deep impurities. Applying a magnetic field the resistance may decrease exponentially at any orientation of the field. A drop of the resistance as much as about 10 000% has been measured at 6 T. The effect is attributed to the spin splitting of impurity ground state with a very large g factor in the order of several tens depending on impurity.


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons