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Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities

Ganichev, Sergey, Ketterl, Hermann, Prettl, Wilhelm, Merkulov, I., Perel, V., Yassievich, Irina and Malyshev, A. (2001) Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities. Physical Review B 63 (20), 201204(R).

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Date of publication of this fulltext: 05 Aug 2009 13:37

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/PRB_Rapid2001_negative_magnito_resistance.pdf


Abstract

A giant negative magnetoresistance has been observed in bulk germanium doped with multiply charged deep impurities. Applying a magnetic field the resistance may decrease exponentially at any orientation of the field. A drop of the resistance as much as about 10 000% has been measured at 6 T. The effect is attributed to the spin splitting of impurity ground state with a very large g factor in the order of several tens depending on impurity.


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Item type:Article
Date:May 2001
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number:
ValueType
10.1103/PhysRevB.63.201204DOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2192
Owner only: item control page

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