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Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities

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Ganichev, Sergey ; Ketterl, Hermann ; Prettl, Wilhelm ; Merkulov, I. ; Perel, V. ; Yassievich, Irina ; Malyshev, A.
Date of publication of this fulltext: 05 Aug 2009 13:37


A giant negative magnetoresistance has been observed in bulk germanium doped with multiply charged deep impurities. Applying a magnetic field the resistance may decrease exponentially at any orientation of the field. A drop of the resistance as much as about 10 000% has been measured at 6 T. The effect is attributed to the spin splitting of impurity ground state with a very large g factor in the order of several tens depending on impurity.

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