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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-21949
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.2194
Zusammenfassung
Tunneling ionization in high-frequencyfields as well as in static fields is suggested as a method for the characterization of deep impurities in semiconductors. It is shown that an analysis of the field and temperature dependences of the ionization probabilityallows to obtain defect parameters like the charge of the impurity, tunneling times, the Huang–Rhys parameter, the difference between ...
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