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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-22134
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.2213
Zusammenfassung
An analysis is made of the ionization of deep impurity centers induced by high-intensity terahertz radiation whose photon energies are tens of times lower than the impurity ionization energy. Under these conditions, ionization can be described as phonon-assisted tunneling in which carrier emission is accompanied by defect tunneling in configuration space and electron tunneling in the electric ...
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