Review: Tunnel ionization of deep impurities in semiconductors induced by terahertz electric fields

URN to cite this document:: urn:nbn:de:bvb:355-epub-22134
DOI to cite this document:: 10.5283/epub.2213

Ganichev, Sergey

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Date of publication of this fulltext: 05 Aug 2009 13:37

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Abstract

An analysis is made of the ionization of deep impurity centers induced by high-intensity terahertz radiation whose photon energies are tens of times lower than the impurity ionization energy. Under these conditions, ionization can be described as phonon-assisted tunneling in which carrier emission is accompanied by defect tunneling in configuration space and electron tunneling in the electric ...