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Review: Tunnel ionization of deep impurities in semiconductors induced by terahertz electric fields

Ganichev, Sergey (1999) Review: Tunnel ionization of deep impurities in semiconductors induced by terahertz electric fields. Physica B 273-27, pp. 737-742.

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Other URL: http://www.physik.uni-regensburg.de/forschung/ganichev/reprints/physicaB1999_review_tunneling.pdf, http://www.sciencedirect.com/science?_ob=ArticleListURL&_method=list&_ArticleListID=675292105&_sort=d&view=c&_acct=C000032338&_version=1&_urlVersion=0&_userid=616165&md5=68a84f3efae8178d7de39c1e3de678fc


Abstract

An analysis is made of the ionization of deep impurity centers induced by high-intensity terahertz radiation whose photon energies are tens of times lower than the impurity ionization energy. Under these conditions, ionization can be described as phonon-assisted tunneling in which carrier emission is accompanied by defect tunneling in configuration space and electron tunneling in the electric ...

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Item type:Article
Date:15 December 1999
Institutions:Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev
Identification Number:
ValueType
10.1016/S0921-4526(99)00637-7DOI
Keywords:Tunnel ionization; Terahertz; Far-infrared; Deep centers
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:2213
Owner only: item control page

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