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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-22163
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.2216
Zusammenfassung
Far infrared (FIR) radiation of high-power pulsed laser incident normal to the surface of GaAs/metal tunnel structures with a self-consistent Schottky barrier gives rise to a change in the tunnel conductance. It has been shown that the observed photoresistive effects are caused by ponderomotive forces of the radiation field on the free electron plasma in the junctions. The change of tunnel ...
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