Terahertz tunnel ionization of DX centers in AlGaAs:Te

URN to cite this document:: urn:nbn:de:bvb:355-epub-22186
DOI to cite this document:: 10.5283/epub.2218

Ketterl, Hermann ; Ziemann, E. ; Ganichev, Sergey ; Belyaev, A. ; Schmult, Stefan ; Prettl, Wilhelm ; Yassievich, Irina

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Date of publication of this fulltext: 05 Aug 2009 13:38

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Abstract

Ionization of DX-centers in AlGaAs : Te has been investigated in strong terahertz electric fields of FIR-laser radiation with photon energies much smaller than the impurity binding energy. Detachment of electrons from DX-centers is caused by phonon-assisted tunneling being independent of the field frequency as long as the tunneling time is smaller than the field period. In the opposite case an ...