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Review: Excitation of deep defects by intense terahertz radiation

URN to cite this document:
urn:nbn:de:bvb:355-epub-22196
DOI to cite this document:
10.5283/epub.2219
Ganichev, Sergey
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Date of publication of this fulltext: 05 Aug 2009 13:38


Abstract

An analysis is done of the ionization of deep impurity centers by high-intensity terahertz radiation, with photon energies tens of times lower than the impurity ionization energy. Under these conditions, ionization can be described as direct tunneling and phonon-assisted tunneling in which carrier emission is accompanied by defect tunneling in configuration space and electron tunneling in the ...

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