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Carrier tunneling in high-frequency electric fields

URN to cite this document:
Ganichev, Sergey ; Ziemann, E. ; Gleim, T. ; Prettl, Wilhelm ; Yassievich, Irina ; Perel, V. ; Wilke, I. ; Haller, E.
Date of publication of this fulltext: 05 Aug 2009 13:38


An enhancement of tunnel ionization of deep impurities in semiconductors in an alternating field as compared to static fields has been observed. The transition between the quasistatic and the high-frequency regime is determined by the tunneling time. For the case of deep impurities this is the time of redistribution of the defect vibrational system which depends strongly on temperature and the ...


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