Storage of electrons in shallow donor excited states of GaP:Te

URN to cite this document:: urn:nbn:de:bvb:355-epub-22282
DOI to cite this document:: 10.5283/epub.2228

Ganichev, Sergey ; Yassievich, Irina ; Raab, W. ; Zepezauer, E. ; Prettl, Wilhelm

Preview

PDF
(109kB)

Date of publication of this fulltext: 05 Aug 2009 13:38

Alternative links to fulltext:DOI Publisher Publisher

Details

Preview

Export bibliographical data

Abstract

Tellurium donors in GaP have been ionized by phonon-assisted tunneling in the electric field of pulsed far-infrared laser radiation. In response to the laser pulse a photoconductive signal has been detected with a fast component that follows in time the laser pulse and a slow component that rises after the irradiation has ceased and finally exponentially decays with a strongly ...