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Ion-beam mixing in crystalline and amorphous germanium isotope multilayers

Bracht, H., Radek, M., Kube, R., Knebel, S., Posselt, M., Schmidt, B., Haller, E. E. and Bougeard, Dominique (2011) Ion-beam mixing in crystalline and amorphous germanium isotope multilayers. J. Appl. Phys. 110 (9), 093502.

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Date of publication of this fulltext: 12 Dec 2011 08:44

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Other URL: http://link.aip.org/link/?JAP/110/093502/1


Abstract

Gallium (Ga) implantation induced self-atom mixing in crystalline and amorphous germanium (Ge) is investigated utilizing isotopically controlled Ge multilayer structures grown by molecular beam epitaxy. The distribution of the Ga ions and the ion-beam induced depth-dependent mixing of the isotope structure was determined by means of secondary ion mass spectrometry. Whereas the distribution of Ga ...

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Item type:Article
Date:2011
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:
ValueType
10.1063/1.3658259DOI
Classification:
NotationType
61.72.ufPACS
66.30.J-PACS
61.80.JhPACS
81.05.CyPACS
81.05.GcPACS
82.80.MsPACS
Keywords:amorphous semiconductors; diffusion; elemental semiconductors; gallium; germanium; ion beam mixing; ion implantation; isotopes; mixing; molecular beam epitaxial growth; multilayers; secondary ion mass spectra; semiconductor doping; semiconductor epitaxial layers; silicon
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Partially
Item ID:22924
Owner only: item control page

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