Go to content
UR Home

Ion-beam mixing in crystalline and amorphous germanium isotope multilayers

URN to cite this document:
urn:nbn:de:bvb:355-epub-229240
Bracht, H. ; Radek, M. ; Kube, R. ; Knebel, S. ; Posselt, M. ; Schmidt, B. ; Haller, E. E. ; Bougeard, Dominique
[img]
Preview
License: Allianz- bzw. Nationallizenz
PDF - Published Version
(1MB)
Date of publication of this fulltext: 12 Dec 2011 08:44


Abstract

Gallium (Ga) implantation induced self-atom mixing in crystalline and amorphous germanium (Ge) is investigated utilizing isotopically controlled Ge multilayer structures grown by molecular beam epitaxy. The distribution of the Ga ions and the ion-beam induced depth-dependent mixing of the isotope structure was determined by means of secondary ion mass spectrometry. Whereas the distribution of Ga ...

plus


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons