Ion-beam mixing in crystalline and amorphous germanium isotope multilayers

URN to cite this document:: urn:nbn:de:bvb:355-epub-229240
DOI to cite this document:: 10.5283/epub.22924

Bracht, H. ; Radek, M. ; Kube, R. ; Knebel, S. ; Posselt, M. ; Schmidt, B. ; Haller, E. E. ; Bougeard, Dominique

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Date of publication of this fulltext: 12 Dec 2011 08:44

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Abstract

Gallium (Ga) implantation induced self-atom mixing in crystalline and amorphous germanium (Ge) is investigated utilizing isotopically controlled Ge multilayer structures grown by molecular beam epitaxy. The distribution of the Ga ions and the ion-beam induced depth-dependent mixing of the isotope structure was determined by means of secondary ion mass spectrometry. Whereas the distribution of Ga ...