Abstract
The electron spin in a homogeneous spin-polarized two- dimensional electron gas can drive an electric current if some general symmetry requirements are met (for review see [1]). The microscopic origin of the spin- galvanic effect is the inherent asymmetry of spin-flip scattering of electrons in systems with removed $k$-space spin degeneracy of the band structure. The spin-galvanic effect is quite ...
Abstract
The electron spin in a homogeneous spin-polarized two- dimensional electron gas can drive an electric current if some general symmetry requirements are met (for review see [1]). The microscopic origin of the spin- galvanic effect is the inherent asymmetry of spin-flip scattering of electrons in systems with removed 
-space spin degeneracy of the band structure. The spin-galvanic effect is quite general. It has been observed in various quantum well structures at temperatures varying from 4.2 K to 300 K and at different types of optical excitation in a wide spectral range from visible to the far infrared. Spin-galvanic effect provides new experimental aspect to spin properties of low dimensional semiconductor structures. In particular, the angular dependent measurements of the spin-galvanic current allow the separation of contributions to the band splitting due to Dresselhaus and Rashba terms in the Hamiltonian. Most recently the reversed spin-galvanic effect, i.e. a spin polarization induced by an electric current flow [2], has also been observed [3] demonstrating that a spin polarization can be achieved in non-magnetic semiconductor structures.
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