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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-235982
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.23598
Zusammenfassung
We have studied spin dephasing in a high-mobility two-dimensional electron system confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the RSA spectra, we are able to extract the spin dephasing times (SDTs) for electron spins aligned along the growth direction or within the sample plane, as ...
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