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Strongly anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells

URN to cite this document:
urn:nbn:de:bvb:355-epub-235982
DOI to cite this document:
10.5283/epub.23598
Griesbeck, Michael ; Glazov, Mikhail ; Sherman, E. Ya. ; Schuh, Dieter ; Wegscheider, Werner ; Schüller, Christian ; Korn, Tobias
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Date of publication of this fulltext: 20 Mar 2012 11:34


Abstract

We have studied spin dephasing in a high-mobility two-dimensional electron system confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the RSA spectra, we are able to extract the spin dephasing times (SDTs) for electron spins aligned along the growth direction or within the sample plane, as ...

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