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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-241736
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.24173
Zusammenfassung
The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of rather symmetric dot-lead tunnel couplings strong enough to allow direct transport measurements. Unfortunately, this standard procedure fails for weak and ...
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