With the recent discovery of very long hole spin decoherence times in GaAs/AlGaAs heterostructures of more than 70 ns
in two-dimensional hole systems, using the hole spin as a viable alternative to electron spins in spintronic applications seems
possible. Furthermore, as the hyperfine interaction with the nuclear spins is likely to be the limiting factor for electron spin
lifetimes in zero dimensions, holes with their suppressed Fermi contact hyperfine interaction due to their p-like nature should
be able to show even longer lifetimes than electrons. For spintronic applications, electric-field control of hole spin dynamics
is desirable.
Here, we report on time-resolved Kerr rotation and resonant spin amplification measurements on a two-dimensional hole
system in a p-doped GaAs/AlGaAs heterostructure. Via a semitransparent gate, we tune the charge density within the sample.
We are able to observe a change in the hole g factor, as well as in the hole spin dephasing time at high magnetic fields.