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Stoßionisationsinduzierte Strukturbildung in Halbleitern mittels Mikrowellen
Hirschinger, J., Schowalter, Dieter, Belkov, Vassilij, Novak, V., Niedernostheide, F.-J., Ganichev, Sergey and Prettl, Wilhelm (1999) Stoßionisationsinduzierte Strukturbildung in Halbleitern mittels Mikrowellen. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1999, Münster.Date of publication of this fulltext: 05 Aug 2009 13:39
Conference or workshop item
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| Item type | Conference or workshop item (Speech) |
| Page Range: | p. 698 |
|---|---|
| Date | 1999 |
| Institutions | Physics > Institute of Experimental and Applied Physics > Professor Ganichev > Group Sergey Ganichev |
| Dewey Decimal Classification | 500 Science > 530 Physics |
| Status | Published |
| Refereed | Yes, this version has been refereed |
| Created at the University of Regensburg | Yes |
| Item ID | 2439 |
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