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- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-252486
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.25248
Zusammenfassung
Highly accurate numerical results of phonon-induced two-electron spin relaxation in silicon double quantum dots are presented. The relaxation, enabled by spin-orbit coupling and the nuclei of 29Si (natural or purified abundance), is investigated for experimentally relevant parameters, the interdot coupling, the magnetic field magnitude and orientation, and the detuning. We calculate relaxation ...
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