| Lizenz: Allianz- bzw. Nationallizenz PDF - Veröffentlichte Version (1MB) |
- URN zum Zitieren dieses Dokuments:
- urn:nbn:de:bvb:355-epub-264587
- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.26458
Alternative Links zum Volltext:
Zusammenfassung
Single- and few-layer MoS2 has recently gained attention as an interesting material system for opto-electronics. Here, we report on scanning Raman measurements on few-layer MoS2 flakes prepared by exfoliation. We observe a Raman mode corresponding to a rigid shearing oscillation of adjacent layers. This mode appears at very low Raman shifts between 20 and 30 cm−1. Its position strongly depends on ...
Nur für Besitzer und Autoren: Kontrollseite des Eintrags
Downloadstatistik