Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes

URN to cite this document:: urn:nbn:de:bvb:355-epub-264587
DOI to cite this document:: 10.5283/epub.26458

Plechinger, Gerd

; Heydrich, Stefanie ; Eroms, Jonathan

; Weiss, Dieter

; Schüller, Christian ; Korn, Tobias

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Date of publication of this fulltext: 23 Oct 2012 06:37

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Abstract

Single- and few-layer MoS2 has recently gained attention as an interesting material system for opto-electronics. Here, we report on scanning Raman measurements on few-layer MoS2 flakes prepared by exfoliation. We observe a Raman mode corresponding to a rigid shearing oscillation of adjacent layers. This mode appears at very low Raman shifts between 20 and 30 cm−1. Its position strongly depends on ...