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Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes

URN to cite this document:
urn:nbn:de:bvb:355-epub-264587
Plechinger, Gerd ; Heydrich, Stefanie ; Eroms, Jonathan ; Weiss, Dieter ; Schüller, Christian ; Korn, Tobias
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Date of publication of this fulltext: 23 Oct 2012 06:37


Abstract

Single- and few-layer MoS2 has recently gained attention as an interesting material system for opto-electronics. Here, we report on scanning Raman measurements on few-layer MoS2 flakes prepared by exfoliation. We observe a Raman mode corresponding to a rigid shearing oscillation of adjacent layers. This mode appears at very low Raman shifts between 20 and 30 cm−1. Its position strongly depends on ...

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