Antiferromagnetic coupling across silicon regulated by tunneling currents

URN to cite this document:: urn:nbn:de:bvb:355-epub-265071
DOI to cite this document:: 10.5283/epub.26507

Gareev, R. R. ; Schmid, M. ; Vancea, Johann ; Back, C. H. ; Schreiber, Rainer ; Bürgler, D. ; Schneider, C. M. ; Stromberg, F. ; Wende, Heiko

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Date of publication of this fulltext: 23 Oct 2012 06:32

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Abstract

We report on the enhancement of antiferromagnetic coupling in epitaxial Fe/Si/Fe structures by voltage-driven spin-polarized tunneling currents. Using the ballistic electron magnetic microscopy, we established that the hot-electron collector current reflects magnetization alignment and the magnetocurrent exceeds 200% at room temperature. The saturation magnetic field for the collector current ...